Manufacturing Processes II Mock Test 3

1. Bending curvature of silicon wafers varies ______ with the specific area of the MpSi structure.

2. MpSi structures have a random distribution of pores.

3. Metal-assisted chemical etching approach is widely used to produce pSi structures with precisely defined geometric features.

4. Which of the following metals are used in metal-assisted approach to etch silicon?

5. Etching rate of silicon is independent of the crystal planes.

6. Which of the following is one of the important optical property of mpSi and μpSi structure?

7. Length of the silicon dioxide pillars is dependant on the etching time and the pore length.

8. At high concentrations of HF, the etching rate is determined by _____

9. If the etching conditions are not controlled, then _____ decreases with pore depth.

10. It can be said that metal-assisted etching of silicon is an alternative approach to conventional electrochemical etching methods.